Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-03-04
2008-03-04
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257SE23145
Reexamination Certificate
active
10867076
ABSTRACT:
A semiconductor device and method of manufacture thereof wherein scattering bars are disposed on both sides of an isolated conductive line of a semiconductor device to improve the lithography results. The scattering bars have a sufficient width and are spaced a sufficient distance from the isolated conductive line so as to increase the depth of focus of the isolated conductive line during the patterning of the semiconductor device. The scattering bars are left remaining in the finished semiconductor device after the manufacturing process is completed.
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Chen Kuei Shun
Lai Chih-Ming
Lin Chin-Hsiang
Yen Yung-Sung
Parekh Nitin
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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