Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-06-26
2011-10-04
Landau, Matthew (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S536000, C257S350000, C257S904000, C257SE27016
Reexamination Certificate
active
08030738
ABSTRACT:
Disclosed is a semiconductor device with a resistor pattern and methods of fabricating the same. Embodiments of the present invention provide a method of fabricating a resistor pattern having high sheet resistance by using a polycide layer for a gate electrode in a semiconductor device with the resistor pattern. Embodiments of the invention also provide a semiconductor device with a resistor pattern that is formed narrower than the minimum line width that can be defined in a photolithographic process so that sheet resistance thereof increases, and a method of fabricating the same.
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English language abstract of Korean Publication No. 1999-002760, Jan. 15, 1999.
Chan Candice
Landau Matthew
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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