Semiconductor device with resistor elements formed on...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S382000, C438S382000

Reexamination Certificate

active

07045865

ABSTRACT:
A semiconductor device of the invention has a plurality of resistor elements formed on an element isolating oxide film in predetermined regions on a surface of a semiconductor substrate. Active regions are furnished close to the resistor elements. This allows the element isolating oxide film near the resistor elements to be divided into suitable strips, forestalling a concave formation at the center of the element isolating oxide film upon polishing of the film by CMP and thereby enhancing dimensional accuracy of the resistor elements upon fabrication.

REFERENCES:
patent: 4326213 (1982-04-01), Shirai et al.
patent: 4384299 (1983-05-01), Raffel et al.
patent: 5135882 (1992-08-01), Karniewicz
patent: 5589708 (1996-12-01), Kalnitsky
patent: 6121643 (2000-09-01), Gardner et al.
patent: 6130139 (2000-10-01), Ukeda et al.
patent: 6232104 (2001-05-01), Lishanski et al.
patent: 6284599 (2001-09-01), Mehrad et al.
patent: 6285066 (2001-09-01), Meyer
patent: 6340833 (2002-01-01), Liu et al.
patent: 6365481 (2002-04-01), Bonser et al.
patent: 2002/0004270 (2002-01-01), Moriwaki et al.
patent: 2002/0033519 (2002-03-01), Babcock et al.
patent: 2002/0084886 (2002-07-01), Wu
patent: 9-64279 (1997-03-01), None
Wolf, S., Silicon Processing for the VLSI ERA-vol. 2: Process Integration, 1990 by Lattice Press, vol. 2, pp. 48-49.
Van Zant, Peter; Microchip Fabrication (2000), McGraw-Hill, Fourth Edition, pp. 30-31.
Wolf et al., Silicon Processing for the VLSI Era (2000), Lattice Press, Second Edition, vol. 1, p. 301.
Illingworth, Valerie; Dictionary of Electronics (1998), Penguin Books, Third Edition, pp. 4 and 366-.367.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device with resistor elements formed on... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with resistor elements formed on..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with resistor elements formed on... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3628597

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.