Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-14
2010-10-05
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S379000, C257SE29255, C257SE21373, C438S296000
Reexamination Certificate
active
07808050
ABSTRACT:
A semiconductor device includes at least one active component (18) having a p-n junction (26) on the semiconductor substrate in an active region (19) of the semiconductor substrate (4). A shallow trench isolation pattern is used to form a plurality of longitudinally extending shallow trenches (12) containing insulator (14). These trenches define a plurality of longitudinal active stripes (10) between the shallow trenches (12). The shallow trench isolation depth (dsπ) is greater than the junction depth (dsO of the longitudinal active stripes and the width (wsO of the active stripes (10) is less than the depletion length (ldepi) of the p-n junction.
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Sze, “Semiconductor devices, physics and technology”, 2002, Wiley and Sons, pp. 172, 188).
Heringa Anco
Sonsky Jan
Dickey Thomas L
NXP B.V.
Yushin Nikolay
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