Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-27
2009-12-01
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000, C257S406000, C257S390000, C257SE27102
Reexamination Certificate
active
07626227
ABSTRACT:
A semiconductor device is provided which includes a gate electrode (30) provided on a semiconductor substrate (10), an oxide
itride/oxide (ONO) film (18) that is formed between the gate electrode (30) and the semiconductor substrate (10) and has a charge storage region (14) under the gate electrode (30), and a bit line (28) that is buried in the semiconductor substrate (10) and includes a low concentration diffusion region (24), a high concentration diffusion region (22) that is formed in the center of the low concentration diffusion region (24) and has a higher impurity concentration than the low concentration region, a source region, and a drain region. The semiconductor device can improve the source-drain breakdown voltage of the transistor while suppressing fluctuation of electrical characteristics or junction current between the bit line (28) and the semiconductor substrate (10).
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Higashi Masahiko
Kouketsu Hiroaki
Lee Eugene
Spansion LLC
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