Semiconductor device with reduced number of through holes and me

Details Semiconductor device with reduced number of through holes and me Semiconductor device with reduced number of through holes and me

1998-07-06

2000-08-15

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257382, 257384, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

061040703

ABSTRACT:
A semiconductor device with reduced number of through holes is disclosed. A source region and a dielectric layer are connected by a conductive layer made of silicide formed on the surface of the source region and the dielectric layer commonly, and a drain region and an output electrode are connected by another conductive layer made of silicide. The conductive layer interconnecting the source region and the dielectric layer, and the conductive layer interconnecting the drain region and the output electrode are formed in one step as they are disposed beneath an insulation layer on the surface of the semiconductor substrate.

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Patent Abstracts of Japan, Appln. No. 57146700, dated Feb. 1984, Structure of CMOS Element.
Patent Abstracts of Japan, Appln. No. 57216821, dated Jun. 1984, Semiconductor Integrated Circuit Device.

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