Static information storage and retrieval – Powering
Reexamination Certificate
2006-01-31
2006-01-31
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Powering
C365S227000, C365S229000
Reexamination Certificate
active
06992946
ABSTRACT:
In order to reduce a gate-source leakage current in a standby state, the gate insulating film of one of transistors in each of inverters IV1–IV5is made thick. In a standby state, an input signal IN has L level and accordingly one of the transistors in inverters IV1–IV5each that is connected to a main power supply line or a main ground line is turned on. The turned-on transistors have the gate insulating film which is made thicker than that of normal transistors to reduce the gate leakage current thereby reduce current consumption in the standby state.
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Dinh Son T.
McDermott Will & Emery LLP
Renesas Technology Corp.
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