Semiconductor device with reduced contact resistance and...

Details Semiconductor device with reduced contact resistance and... Semiconductor device with reduced contact resistance and...

2007-02-23

2009-08-04

Lewis, Monica (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27062, C257S382000

Reexamination Certificate

active

07569891

ABSTRACT:
It is made possible to reduce the contact resistance of the source and drain in an n-type MISFET. A semiconductor device includes: a source and drain regions provided in a p-type semiconductor substrate so as to separate each other, each including: a silicide layer containing a first metal element as a main component having a vacuum work function of 4.6 eV or greater; and a layer containing at least one second metal element selected from the group of scandium elements and lanthanoid, the layer containing the second metal element including a segregating layer in which the highest areal density is 1×1014cm−2or higher, each region of the segregating layer with areal density of 1×1014cm−2or higher having a thickness smaller than 1 nm; a gate insulating film provided a region between the source and drain regions on the semiconductor substrate; and a gate electrode provided on the gate insulating film.

REFERENCES:
patent: 2005/0127451 (2005-06-01), Tsuchiya et al.
patent: 2006/0038229 (2006-02-01), Tsuchiya et al.
patent: 2006/0163624 (2006-07-01), Kuroi
patent: 2005-101588 (2005-04-01), None
Hiroyuki Kanaya et al., “Reduction of the Barrier Height of Silicide / p-Si1-xGexContact for Appication in an Infared Image Sensor,” Japanese Journal of Applied Physics, vol. 28, No. 4, pp. L544-L546 (Apr. 1989).

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