Semiconductor device with recording layer containing indium,...

Details Semiconductor device with recording layer containing indium,... Semiconductor device with recording layer containing indium,...

2011-08-16

2011-08-16

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Resistive

C257S002000, C257SE27047

Reexamination Certificate

active

08000126

ABSTRACT:
A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.

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Non-published U.S. Appl. No. 12/094,403.

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