Semiconductor device with recessed channel

Details Semiconductor device with recessed channel Semiconductor device with recessed channel

2007-01-05

2009-10-13

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE21428

Reexamination Certificate

active

07602013

ABSTRACT:
A semiconductor device includes: a layer provided on or above a semiconductor substrate, having an opening, and containing Si and Ge; and a gate provided at a position corresponding to the opening. It is possible to provide a semiconductor device and a manufacturing method of the same which realize easy control of a recess amount and reduction in damage at the time of the recessing.

REFERENCES:
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patent: 6566734 (2003-05-01), Sugihara et al.
patent: 6879001 (2005-04-01), Yagishita et al.
patent: 7041538 (2006-05-01), Ieong et al.
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patent: 2003/0211681 (2003-11-01), Hanafi et al.
patent: 2004/0124492 (2004-07-01), Matsuo
patent: 2005/0093035 (2005-05-01), Yagishita et al.
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patent: 2007/0138565 (2007-06-01), Datta et al.
patent: 2003-298060 (2003-10-01), None
English language abstract of CN 1450658 published Oct. 22, 2003.
Matsuo et al., “High Performance Damascene Gate CMOSFETs with Recessed Channel Formed by Plasma Oxidation and Etching Method (RC-POEM),” IEDM Tech. Dig. (2002), pp. 445-448.

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