Semiconductor device with recessed active region and gate in...

Details Semiconductor device with recessed active region and gate in... Semiconductor device with recessed active region and gate in...

2008-01-28

2010-11-02

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29260

Reexamination Certificate

active

07825464

ABSTRACT:
A semiconductor device and a method for manufacturing the same are disclosed. The disclosed semiconductor device includes a semiconductor substrate having a device isolation structure for delimiting an active region, the active region being recessed and grooves being defined in channel forming areas of the active region; gates formed in and over the grooves; gate spacers formed on both sidewalls of the gates over portions of the recessed active region which are positioned on both sides of the gates; an LDD region formed in the active region under the gate spacers; junction areas formed in the active region on both sides of the gates including the gate spacers; and landing plugs formed on the junction areas.

REFERENCES:
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patent: 7344943 (2008-03-01), Herrick et al.
patent: 7378320 (2008-05-01), Seo et al.
patent: 2003/0075759 (2003-04-01), Kawano et al.
patent: 2007/0007571 (2007-01-01), Lindsay et al.
patent: 2007/0296031 (2007-12-01), Tanaka
patent: 1020040008478 (2004-01-01), None
patent: 10-0498476 (2005-07-01), None
patent: 1020060080718 (2006-07-01), None
patent: 1020070114463 (2007-12-01), None

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