Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-15
2011-03-15
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S139000
Reexamination Certificate
active
07906811
ABSTRACT:
In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, a MOS transistor is formed. Around the MOS transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the MOS transistor. By use of this structure, when negative ESD surge is applied to a pad for a source electrode, the PN junction region of the protection element breaks down. Accordingly, the MOS transistor can be protected.
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Fish & Richardson P.C.
Ida Geoffrey
Le Thao X
Sanyo Electric Co., Ltd. (Osaka)
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