Semiconductor device with programming capacitance element

Details Semiconductor device with programming capacitance element Semiconductor device with programming capacitance element

1999-03-19

2000-09-05

Nelms, David

Static information storage and retrieval

Systems using particular element

Capacitors

365200, G11C 1124

Patent

active

061152838

ABSTRACT:
In order to implement a capacitor-type anti-fuse having desired breakdown voltage characteristics and efficiently and reliably set in a blown state while reliably holding program information in a normal operation mode, capacitance elements having the same structure as memory cell capacitors are arranged alignedly along a row or column direction and coupled in parallel with each other for implementing a capacitor-type anti-fuse. The memory cell pattern is repeated also in a peripheral circuit region, whereby capacitance elements having a complete structure can be implemented to implement a capacitor-type anti-fuse correctly having desired characteristics.

REFERENCES:
patent: 5110754 (1992-05-01), Lowrey et al.
patent: 5334880 (1994-08-01), Abadeer et al.
patent: 5631862 (1997-05-01), Cutter et al.
patent: 5652725 (1997-07-01), Suma et al.
patent: 5896041 (1999-04-01), Sher et al.
"Ultra LSI Memory", K. Ito, Published by Baifukan, pp. 181-183.

Affiliated with

Also associated with

Rating

Semiconductor device with programming capacitance element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with programming capacitance element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with programming capacitance element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2219251