Semiconductor device with porous interlayer insulating film

Details Semiconductor device with porous interlayer insulating film Semiconductor device with porous interlayer insulating film

2007-09-04

2007-09-04

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S960000, C438S622000

Reexamination Certificate

active

10938107

ABSTRACT:
In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.

REFERENCES:
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5461003 (1995-10-01), Havemmann et al.
patent: 5468685 (1995-11-01), Orisaka et al.
patent: 5470801 (1995-11-01), Kapoor et al.
patent: 5470802 (1995-11-01), Gnade et al.
patent: 5472913 (1995-12-01), Havemmann et al.
patent: 5494859 (1996-02-01), Kapoor
patent: 5693557 (1997-12-01), Hirao et al.
patent: 5789819 (1998-08-01), Gnade et al.
patent: 5804454 (1998-09-01), Mori et al.
patent: 5830532 (1998-11-01), Tang et al.
patent: 5965202 (1999-10-01), Taylor-Smith et al.
patent: 6066573 (2000-05-01), Muroyama
patent: 6171945 (2001-01-01), Mandal et al.
patent: 6180507 (2001-01-01), Lan
patent: 6246105 (2001-06-01), Morozumi et al.
patent: 6255156 (2001-07-01), Forbes et al.
patent: 6404025 (2002-06-01), Hshieh et al.
patent: 6566756 (2003-05-01), Morisaki et al.
patent: 6812163 (2004-11-01), Morisaki et al.
patent: 1-235254 (1989-09-01), None
patent: 4-116155 (1992-04-01), None
patent: 6-232117 (1994-08-01), None
patent: 7-335880 (1995-12-01), None
patent: 8-83839 (1996-03-01), None
patent: 8-162450 (1996-06-01), None
patent: 96-9050 (1999-03-01), None
Wolf et al., Silicon Processing for the VLSI Era, vol. 1-Process Technology; Sunset Beach, CA: Lattice Press, 1986, pp. 230-234.
Translation of Office Action for U.S. Appl. No. 10-103967, Japanese Patent Office.

Affiliated with

Also associated with

Rating

Semiconductor device with porous interlayer insulating film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with porous interlayer insulating film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with porous interlayer insulating film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3726489