Semiconductor device with polysilicon layer of good crystallinit

Details Semiconductor device with polysilicon layer of good crystallinit Semiconductor device with polysilicon layer of good crystallinit

1997-11-21

1999-10-19

Brown, Peter Toby

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

438149, 438166, 438 97, H01L 2120

Patent

active

059703695

ABSTRACT:
A multilayer polysilicon semiconductor device having a first layer of amorphous semiconductor deposited on the surface of an underlying substrate. The first layer is polycrystallized by applying an energy beam to the first layer. A second layer is deposited on the surface of the polycrystallized first layer, the second layer being made of amorphous semiconductor having the same composition as the first layer or polycrystalline semiconductor. Crystallinity of the second layer is changed by applying an energy beam to the second layer. The substrate may be heated when the energy beam is applied to the second layer.

REFERENCES:
patent: 4375993 (1983-03-01), Mori et al.
patent: 5444302 (1995-08-01), Nakajima eta l.
patent: 5766803 (1998-07-01), Young
patent: 5766989 (1998-06-01), Maegawa et al.
patent: 5797999 (1998-08-01), Sannomiya et al.
patent: 5827773 (1998-10-01), Voutsas
The Japan Society of Applied Physics, pp. 59-62, Sep. 11-12, 1997.

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