Semiconductor device with polymer insulation of some electrodes

Details Semiconductor device with polymer insulation of some electrodes Semiconductor device with polymer insulation of some electrodes

2006-05-09

2006-05-09

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000

Reexamination Certificate

active

07042053

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a principal plane on which gate, source, and drain electrodes are located. A film made of a polymer with a low dielectric constant is over the gate and drain electrodes to insulate the gate and drain electrodes from the source electrodes. A chip surface electrode located over the low-dielectric-constant polymer film and the source electrode, and connected to ground potential. The source electrode is provided with the ground potential through the chip surface electrode.

REFERENCES:
patent: 6071809 (2000-06-01), Zhao
patent: 6483176 (2002-11-01), Noguchi et al.
patent: 6664624 (2003-12-01), Haematsu
Loke et al., “Copper Drift In Low-K Polymer Dielectrics for ULSI Metallization,”1998 Symposium on VLSI Tech.,Jun. 9-11, 1998, Honolulu, HI.
Web Page: Ireland Integrated Circuit Technology Research Institute NMRC, pp. 1-2, Oct. 10, 2003.

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