Semiconductor device with perovskite capacitor

Details Semiconductor device with perovskite capacitor Semiconductor device with perovskite capacitor

2006-10-17

2006-10-17

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S310000

Reexamination Certificate

active

07122851

ABSTRACT:
A semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a top electrode and a dielectric film between the bottom and top electrodes, the bottom electrode including a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, expressed by ABO3, and containing first metal element as B-site element, and a metal film provided between the conductive film and the metal oxide film, and containing second metal element which is B-site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy when the second metal element forms oxide being larger than that when the first metal element forms oxide, a thickness of the metal oxide film being 5 nm or less.

REFERENCES:
patent: 6351006 (2002-02-01), Yamakawa et al.
patent: 6924519 (2005-08-01), Itokawa et al.
patent: 11-195768 (1999-07-01), None
patent: 2000-208725 (2000-07-01), None
patent: 2000-260954 (2000-09-01), None
patent: 2004-335643 (2004-11-01), None

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