Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2005-08-02
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000, C257S303000, C257S306000, C257S310000
Reexamination Certificate
active
06924519
ABSTRACT:
There is disclosed a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and comprising a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, at least one of the bottom electrode and the top electrode comprising a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, represented by ABO3, and containing a first metal element as a B site element, and a metal film provided between the conductive film and the metal oxide film, and containing a second metal element which is a B site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy at a time when the second metal element forms an oxide being larger than that at a time when the first metal element forms an oxide.
REFERENCES:
patent: 6372598 (2002-04-01), Kang et al.
patent: 6602543 (2003-08-01), Yadav et al.
patent: 2000-208725 (2000-07-01), None
patent: 2000-260954 (2000-09-01), None
Imai Keitaro
Itokawa Hiroshi
Moon Bum-ki
Natori Katsuaki
Yamakawa Koji
Fenty Jesse A.
Infineon - Technologies AG
Jackson Jerome
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