Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-12-29
1999-10-19
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257737, 257738, 257778, H01L 2348
Patent
active
059694246
ABSTRACT:
A semiconductor device equipped with secondary pads having adequate arrangement for an arbitrary packaging process. The secondary pads are connected with the primary pads of the semiconductor device with a novel lead wire structure, which is characterized by its low electric resistance, good mechanical strength to protect active components of the device, good adhesion to bumps, and anti-electromigration property. The semiconductor device has: semiconductor circuit elements 2 embedded in a semiconductor substrate 1; a plurality of conductive primary pads 4 each formed in a region above, and surrounding, the circuit element 2; a first protective insulation substrate 5 covering the substrate and having first openings 6 for the primary pads 4; lead wires 7 each consisting of a conductive bulk layer 15 made of copper and a metallic top layer 16, the bulk layer formed on the first protective insulation substrate 5 and having one end connected with a corresponding one of the primary pads 4 through an associated opening 6 and the other end located in a region surrounding the opening 6, while the top layer made of a metal having Vickers hardness of more than 100; and a second protective insulation substrate 8 having second openings 9 for exposing the top surfaces of the other ends of the lead wires 7 serving as the secondary pads 17.
REFERENCES:
patent: 5134460 (1992-07-01), Brady et al.
patent: 5272376 (1993-12-01), Ueno
patent: 5668405 (1997-09-01), Yamashita et al.
Imamura Kazuyuki
Kado Kenichi
Matsuki Hirohisa
Watanabe Eiji
Yurino Takahiro
Fujitsu Limited
Jr. Carl Whitehead
Potter Roy
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