Semiconductor device with novel film composition

Details Semiconductor device with novel film composition Semiconductor device with novel film composition

2005-09-27

2005-09-27

Zarneke, David (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S758000, C257S768000

Reexamination Certificate

active

06949827

ABSTRACT:
A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsorb onto the substrate and thereby form an initiation layer. The initiation layer presents at least one first reactive moiety which is then chemically reacted with at least one first reaction material using atomic layer deposition conditions to form a second reactive moiety. The second reactive moiety is then chemically reacted with at least one second reaction material under process conditions sufficient to form a reaction layer over the initiation layer. The process may be repeated to form successive reaction layers over the initiation layer. The adherent material constituting the initiation layer is preferably one which is not substantially degraded by the atomic layer deposition parameters. The initiation layer together with one or more reaction layer(s) constitutes the final film.

REFERENCES:
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5340408 (1994-08-01), Boer
patent: 5344792 (1994-09-01), Sandhu et al.
patent: 5399881 (1995-03-01), Bozovic et al.
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 5612558 (1997-03-01), Harshfield
patent: 5696017 (1997-12-01), Ueno
patent: 5746826 (1998-05-01), Hasegawa et al.
patent: 5851849 (1998-12-01), Comizzoli et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5899725 (1999-05-01), Harshfield
patent: 5908947 (1999-06-01), Vaartstra
patent: 5923056 (1999-07-01), Lee et al.
patent: 5942799 (1999-08-01), Danek et al.
patent: 5976976 (1999-11-01), Doan et al.
patent: 5981319 (1999-11-01), Lothian et al.
patent: 5994775 (1999-11-01), Zhao et al.
patent: 5997639 (1999-12-01), Iyer
patent: 6031244 (2000-02-01), Noguchi et al.
patent: 6069072 (2000-05-01), Konecni et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6340622 (2002-01-01), Lee et al.
patent: 6350667 (2002-02-01), Chen et al.
patent: WO 98 23389 (1998-06-01), None
patent: WO 00 47404 (2000-08-01), None
patent: WO 00 61833 (2000-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device with novel film composition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with novel film composition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with novel film composition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3418046