Semiconductor device with nitrogen implanted channel region

Details Semiconductor device with nitrogen implanted channel region Semiconductor device with nitrogen implanted channel region

1997-10-01

2000-11-28

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257339, 257607, 257655, H01L 2976

Patent

active

061539104

ABSTRACT:
A boron diffusion region is formed at a surface of a silicon substrate. A pair of n-type source/drain regions are formed at a surface of boron diffusion region. A gate electrode is formed at a region located between paired source/drain regions with a gate insulating film therebetween. A nitrogen implanted region is formed at the surface of silicon substrate located between paired n-type source/drain regions. Nitrogen implanted region has a peak nitrogen concentration at a position of a depth not exceeding 500 .ANG. from the surface of silicon substrate. Thereby, a transistor structure which can be easily miniaturized can be obtained.

REFERENCES:
patent: 4755865 (1988-07-01), Wilson et al.
patent: 4772927 (1988-09-01), Saito et al.
patent: 4774197 (1988-09-01), Haddad et al.
patent: 5557129 (1996-09-01), Oda et al.
T. Kuroi et al., "Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High Performance 25.mu.m Dual Gate CMOS", International Electron Devices Meeting 1993, Dec. 1993, p. 325.
David R. Lee, "Reliability of Nitrided Si-SiO.sub.2 Interfaces Formed by a New, Low-Temperature, Remote-Plasma Process", Journal of Vacuum Science & Technology B, vol. 13, No. 4, Jul./Aug. 1995, pp. 1788-1793.
"Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) . . . ", Kuroi et al., IEDM 93, pp. 325-328.

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