Semiconductor device with nitrided gate insulating film

Details Semiconductor device with nitrided gate insulating film Semiconductor device with nitrided gate insulating film

1991-11-27

1993-08-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 437241, H01L 2978, H01L 2934

Patent

active

052371883

ABSTRACT:
A semiconductor device formed on a silicon substrate consisting of the steps of producing a silicon oxide film on the silicon substrate, producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a conductive film on the silicon nitride film nitrided in the atmosphere of the nitrogenous gas, producing a gate region from the silicon oxide film, the silicon nitride film, and the conductive film, a channel region being positioned under the gate region in the silicon substrate, producing a source region in the silicon substrate adjacent to one side of the channel region, producing a drain region in the silicon substrate adjacent to another side of the channel region, and producing wiring regions on the source region, the drain region, and the gate region.

REFERENCES:
patent: 4623912 (1986-11-01), Chang et al.
patent: 4962065 (1990-10-01), Brown et al.

Affiliated with

Also associated with

Rating

Semiconductor device with nitrided gate insulating film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with nitrided gate insulating film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with nitrided gate insulating film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2246181