Semiconductor device with mushroom electrode and manufacture...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Reexamination Certificate

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C438S574000, C438S949000, C438S950000, C257SE21205, C257SE21455, C257SE21638

Reexamination Certificate

active

10768092

ABSTRACT:
A semiconductor device has: a semiconductor substrate having a pair of current input/output regions via which current flows; an insulating film formed on the semiconductor substrate and having a gate electrode opening; and a mushroom gate electrode structure formed on the semiconductor substrate via the gate electrode opening, the mushroom gate electrode structure having a stem and a head formed on the stem, the stem having a limited size on the semiconductor substrate along a current direction and having a forward taper shape upwardly and monotonically increasing the size along the current direction, the head having a size expanded stepwise along the current direction, and the stem contacting the semiconductor substrate in the gate electrode opening and riding the insulating film near at a position of at least one of opposite ends of the stem along the current direction.

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