Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1991-09-03
1993-10-26
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Semiconductive
365117, 257 67, 257910, 257 70, H01L 2708, H01L 2710
Patent
active
052572242
ABSTRACT:
A plurality of strip shaped first polysilicon layers 3 are formed on a monocrystalline silicon substrate 1, a plurality of strip shaped second polysilicon layers 5 are formed thereon crossing the first polysilicon layers 3, and a plurality of strip shaped third polysilicon layers 8 are further formed thereon crossing the second polysilicon layers 5. The first and second polysilicon layers 3 and 5 are laser-annealed and monocrystallined. Contact holes 4 and 7 are selectively formed at the crossing points of the first polysilicon layers 3 and the second polysilicon layers 5, and the crossing points of the second polysilicon layers 5 and the third polysilicon layers 8. A PN junction is formed on each surface layer of the first polysilicon layers 3 and the second polysilicon layers 5 in the portions corresponding to these contact holes 4 and 7. Two layers of memory cell arrays using diode elements as memory cells are piled upon each other.
REFERENCES:
patent: 4972370 (1990-11-01), Morimoto et al.
patent: 5170227 (1992-12-01), Kaneko et al.
Kaneko Masahide
Nojiri Isao
LaRoche Eugene R.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Viet Q.
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