Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2011-04-19
2011-04-19
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S784000, C257S786000, C257S797000, C257SE23179
Reexamination Certificate
active
07928586
ABSTRACT:
The semiconductor device having a bonding pad is provided. The bonding pad enables highly reliable connection and high flexibility of the selection of the area to be bonded. The semiconductor device includes a bonding pad and an area designation marking. The bonding pad includes a first region, a second region and a third region formed between the first region and the third region. The area designation marking includes a first notch for designating a first boundary of the first region and the third region and a second notch for designation a second boundary of the second region and the third region. Any of the first region and the second region can be used as the region where the scratch formed by a probing process is to be formed.
REFERENCES:
patent: 2002/0125584 (2002-09-01), Umehara et al.
patent: 2003/0197289 (2003-10-01), Lin
patent: 2004/0232446 (2004-11-01), Nishimura et al.
patent: 2006/0028221 (2006-02-01), Hasegawa
patent: 2001177066 (2001-06-01), None
patent: 2001338955 (2001-12-01), None
McGinn IP Law Group PLLC
Renesas Electronics Corporation
Vu Hung
Webb Vernon P
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