Semiconductor device with multilayered metal pattern

Details Semiconductor device with multilayered metal pattern Semiconductor device with multilayered metal pattern

2007-11-14

2010-06-22

Lee, Eugene (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

62, 62, 62

Reexamination Certificate

active

07741207

ABSTRACT:
A semiconductor device comprises a first insulating film formed on a semiconductor substrate, a first metal pattern formed on the first insulating film, a second insulating film formed on the first metal pattern, a second metal pattern formed on the second insulating film, and a third metal pattern formed in the second insulating film and connecting between the first metal pattern and the second metal pattern. The third metal pattern is a single continuous structure, and the principal orientation axes of crystals of a metal constituting the third metal pattern are parallel to the principal surface of the semiconductor substrate.

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