Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-03-17
1995-06-20
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257768, 257769, 257770, H01L 2348, H01L 2940, H01L 2946, H01L 2954
Patent
active
054263310
ABSTRACT:
A bipolar transistor fabricated on a silicon layer has a base electrode with a multi-layered structure implemented by a titanium film, a titanium nitride film, a platinum film and a gold film, and the platinum film is regulated to 5 to 30 nanometers thick for decreasing the thermal stress between the platinum film and the titanium nitride film equal to or greater than 50 nanometers, thereby preventing the bipolar transistor from damage due to heat applications in later stages.
REFERENCES:
patent: 3879746 (1975-04-01), Fournier
patent: 3926747 (1975-12-01), Newby et al.
patent: 4702967 (1987-10-01), Black et al.
patent: 5130764 (1992-07-01), Cetronio et al.
patent: 5260603 (1993-11-01), Kamura et al.
Limanek Robert P.
NEC Corporation
Ostrowski David
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