Semiconductor device with MISFET

Details Semiconductor device with MISFET Semiconductor device with MISFET

2011-03-29

2011-03-29

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S343000, C257S584000, C257SE21048, C257SE21630, C257SE21432, C257SE21507, C257SE21669

Reexamination Certificate

active

07915688

ABSTRACT:
A semiconductor device includes a substrate, a semiconductor region provided in the substrate, a group of transistors including a plurality of MIS transistors and provided in the semiconductor region, the MIS transistors including a plurality of gate electrodes which extend in a first direction and are provided on the semiconductor region via gate insulation films, an insulation film provided on the group of transistors, and a first contact layer and a second contact layer extending in the first direction and provided on the semiconductor region at opposite sides of the group of transistors.

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