Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-02
2007-10-02
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S131000, C257S156000, C257S340000, C257S376000
Reexamination Certificate
active
09208105
ABSTRACT:
An object of the present invention is to provide a semiconductor device capable of radiating electron-beams only to a desired region without forming a layer for restricting the radiating rays. A source electrode22made of aluminum prevents the generation of bremsstrahlung even when the electron-beams are radiated to the source electrode in a exposed condition. Also, the source electrode having an opening25at above of a crystal defect region11is used as a mask when the electron-beams are radiated thereto. That is the source electrode made of aluminum can be used both as a wiring and a mask for the radiating rays.
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Notice of Reasons for Refusal issued in counterpart Japanese application No. H09-071056, Feb. 19, 2007, pp. 1-4 (with its full English Translation).
Hamre Schumann Mueller & Larson P.C.
Nadav Ori
Rohm & Co., Ltd.
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