Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2006-01-10
2006-01-10
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S750000, C257S751000, C257S753000
Reexamination Certificate
active
06984874
ABSTRACT:
A recess having a height-to-width aspect ratio from about 6:1 to about 10:1 in a semiconductor structure is disclosed with a method of forming the same. In a first embodiment, a refractory metal layer is formed in the recess, which can be a trench, a contact hole, or a combination thereof. A refractory metal nitride layer is then formed on the refractory metal layer. A heat treatment is used to form a metal silicide contact at the bottom of the contact hole upon a semiconductor material. In a first alternative method, an ammonia high-temperature treatment is conducted to remove undesirable impurities within the refractory metal nitride layer lining the contact hole and to replace the impurities with more nitrogen. In a second alternative method, a second refractory metal nitride layer is formed by PVD upon the first refractory metal nitride layer. In either alternative, a metallization layer is deposited within the recess.
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Givens John H.
Kraus Brenda D.
Zahorik Russell C.
Brewster William M.
TraskBritt
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