Semiconductor device with means for suppressing electric fields

Details Semiconductor device with means for suppressing electric fields Semiconductor device with means for suppressing electric fields

1994-09-12

1995-08-08

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257399, 257344, 257376, H01L 21336, H01L 29784, H01L 31068

Patent

active

054401658

ABSTRACT:
An element separating oxide film is formed in a surface of a p-type silicon substrate for separation of an element forming region. A p-type impurity diffusion region extends from the vicinity of a lower surface of the element separating oxide film to a position at a predetermined depth in the element forming region. The p-type impurity diffusion region has a peak of concentration of impurity. In the element forming region adjacent to the element separating oxide film, an n.sup.+ impurity diffusion region is formed on the surface of the p-type silicon substrate. An n.sup.- impurity diffusion region adjacent to the n.sup.+ impurity diffusion region is formed between the n.sup.+ impurity diffusion region and the p-type impurity diffusion region.

REFERENCES:
patent: 4716451 (1987-12-01), Hsu et al.
patent: 5276346 (1994-01-01), Iwai et al.
Chang et al.; "High Voltage FET Integrated Circuit Process"; IBM Technical Disclosure Bulletin, vol. 16, No. 5, Oct. 1973.
L. K. Wang et al., "On the Effects of Implantation of Ions in the MeV Energy Range into Silicon", Solid-State Electronics, vol. 29, No. 7, pp. 739-743.
S. Isomae et al., "A New Two-Dimensional Silicon Oxidation Model", IEEE Transactions on Computer-Aided Design, vol. CAD-6, No. 3, May 1987, pp. 410-416.

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