Semiconductor device with load resistor and fabrication method

Details Semiconductor device with load resistor and fabrication method Semiconductor device with load resistor and fabrication method

2006-12-12

2006-12-12

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Resistor

C257SE21004

Reexamination Certificate

active

07148116

ABSTRACT:
A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the contacts are being generated by etching an insulation layer phenomena of electric charge build up from occurring when an etching process fabricates an insulation layer to generate the contact in a long load resistor located under the insulation layer and insulated electrically and physically.

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J. Choi, et al. “New Process Damage During the Etching of Small-Contact on Long Floating Conductor Layer”, IEEE, 41st Annual International Reliability Physics Symposium, Dallas, TX 2003, pp. 303-306.
U.S. Appl. No. 10/270,563, filed Oct. 2002, Lee et al.

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