Semiconductor device with leakage current prevention

Details Semiconductor device with leakage current prevention Semiconductor device with leakage current prevention

1995-12-20

1997-03-25

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257419, 257496, 257529, 257619, 257622, 437901, H01L 2982

Patent

active

056147538

ABSTRACT:
A semiconductor device is produced through electrolytic etching process. The device comprises a P-type silicon substrate. An N-type epitaxial layer is formed on the silicon substrate. P-type regions are defined in the N-type epitaxial layer. N-type regions are defined in some of the P-type regions. A first wiring layer connects to predetermined ones of the P-type regions. A second wiring layer connects to predetermined ones of the N-type regions. The semiconductor device has a given part which has such a possibility that a predetermined magnitude of leakage current flows therethrough between the first and second wiring layers when subjected to the electrolytic etching process. The semiconductor device further has a circuit which is electrically connected to one of the first and second wiring layers. The circuit is capable of removing the possibility of the leakage current flow through the given part when opened.

REFERENCES:
patent: 5356829 (1994-10-01), Willman
patent: 5525549 (1996-06-01), Fukada et al.

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