Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2007-08-21
2007-08-21
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257S772000, C257S783000
Reexamination Certificate
active
10104826
ABSTRACT:
Each of junctions formed between a semiconductor device and a substrate comprises metal balls of Cu, etc., and compounds of Sn and the metal balls, and the metal balls are bonded together by the compounds.
REFERENCES:
patent: 4749594 (1988-06-01), Malikowski
patent: 5355016 (1994-10-01), Swirbel et al.
patent: 5427865 (1995-06-01), Mullen et al.
patent: 5520752 (1996-05-01), Lucey et al.
patent: 5679055 (1997-10-01), Greene et al.
patent: 5795799 (1998-08-01), Hosoya
patent: 5818699 (1998-10-01), Fukuoka
patent: 5928404 (1999-07-01), Paruchuri et al.
patent: 5941759 (1999-08-01), Kitajima et al.
patent: 5964646 (1999-10-01), Kassir et al.
patent: 5980366 (1999-11-01), Waddle et al.
patent: 6042459 (2000-03-01), Honda
patent: 6132289 (2000-10-01), Labunsky et al.
patent: 6207259 (2001-03-01), Iino et al.
patent: 6217433 (2001-04-01), Herman et al.
patent: 6227950 (2001-05-01), Hempel et al.
patent: 6235996 (2001-05-01), Farooq et al.
patent: 6239013 (2001-05-01), Hotchkiss
patent: 6365973 (2002-04-01), Koning
patent: 6569262 (2003-05-01), Shohji
patent: 03-281093 (1991-12-01), None
patent: 04-48770 (1992-02-01), None
patent: 04-371394 (1992-12-01), None
patent: 7-235565 (1995-09-01), None
patent: 10-163270 (1997-06-01), None
patent: 11-186712 (1999-07-01), None
patent: 2000-49460 (2000-02-01), None
patent: 2000-52027 (2000-02-01), None
patent: 2000-116571 (2000-04-01), None
patent: 3074649 (2000-06-01), None
patent: 2000-223831 (2000-08-01), None
patent: 2000-246483 (2000-09-01), None
patent: 2001-9587 (2001-01-01), None
patent: 2001-205476 (2001-07-01), None
patent: WO 97/12718 (1997-04-01), None
So, William et al., High Temperature Joints Manufactured at Low Temperature, IEEE, Jun. 1998, pp. 284-291, 1998 Electronic Components and Technology Conference.
Endoh Tsuneo
Miura Kazuma
Nakajima Hirokazu
Nakatsuka Tetsuya
Negishi Mikio
Andújar Leonardo
Flynn Nathan J.
Townsend and Townsend / and Crew LLP
LandOfFree
Semiconductor device with lead-free solder does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with lead-free solder, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with lead-free solder will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3888884