Semiconductor device with large blocking voltage

Details Semiconductor device with large blocking voltage Semiconductor device with large blocking voltage

2008-05-25

2011-11-01

Sefer, A. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S049000, C257S256000, C257S262000, C257S267000, C257S272000, C257S273000, C257SE27016, C257SE27017, C257SE27024, C257SE27068, C257SE27069, C257SE27073, C257SE29059, C257SE29194, C257SE29195

Reexamination Certificate

active

08049223

ABSTRACT:
A junction FET having a large gate noise margin is provided. The junction FET comprises an n−layer forming a drift region of the junction FET formed over a main surface of an n+substrate made of silicon carbide, a p+layer forming a gate region formed in contact with the n−layer forming the drift region and a gate electrode provided in an upper layer of the n+substrate. The junction FET further incorporates pn diodes formed over the main surface of the n+substrate and electrically connecting the p+layer forming the gate region and the gate electrode.

REFERENCES:
patent: 6107649 (2000-08-01), Zhao
patent: 2002/0113274 (2002-08-01), Iwagami et al.
patent: 2004/0135178 (2004-07-01), Onose et al.
patent: 2004-134547 (2003-04-01), None
S. Harada et al., “1.8 mΩcm2, 10 A Power MOSFET in 4H-SiC,” Proceedings of International Electron Device Meeting 2006.

Affiliated with

Also associated with

Rating

Semiconductor device with large blocking voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with large blocking voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with large blocking voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4301119