Semiconductor device with isolation insulating film tapered and

Details Semiconductor device with isolation insulating film tapered and Semiconductor device with isolation insulating film tapered and

1997-08-19

2000-01-04

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438713, H06L 21762

Patent

active

060109467

ABSTRACT:
In a method of a semiconductor device, an insulating film on a semiconductor substrate is formed. Then, a first mask on the insulating film in a first region is formed and the insulating film is removed using the first mask for isolation insulating films in the first region. In this case, an element to be formed in the first region has a first active region. Also, a second mask is formed on the insulating film in a second region. The second mask is different from the first mask. The insulting film is removed using the second mask for isolation insulating films in the second region. In this case, a first element to be formed in the first region has a first active region narrower than a second active region of a second element to be formed in the second region. Generally, the insulating film in the first region is removed and then the insulating film in the second region is removed.

REFERENCES:
patent: 4762805 (1988-08-01), Cheung et al.
patent: 5534456 (1996-07-01), Yuan et al.
patent: 5712205 (1998-01-01), Park et al.
S. Wolf and R.N. Tuaber, Silicon Processing for the VLSI Era, vol. 1, Lattice Press, pp. 408 and 547-551,1986.

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