Semiconductor device with isolated transistors

Details Semiconductor device with isolated transistors Semiconductor device with isolated transistors

1994-03-15

1994-12-20

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

207549, 207368, 207370, 207378, H01L 2978

Patent

active

053748409

ABSTRACT:
An epitaxial layer is formed on a semiconductor substrate, and a CMOS circuit or a functional device is formed on an impurity layer deeply extended to reach the semiconductor substrate and on an epitaxial layer region surrounded by the impurity layer. Thus the devices are substantially equivalent to those formed on a silicon substrate having no epitaxial layer. A CMOS circuit or functional device formed on an impurity layer that does not reach the semiconductor substrate and on the epitaxial layer region is made electrically independent of the semiconductor substrate, and hence can be deemed to be substantially equivalent to the case when the epitaxial layer is made to serve as a substrate.
An epitaxial layer of a conductivity type reverse to that of a silicon substrate is used, and hence a plurality of functional devices can be formed respectively thereon at the same time. It is also possible to prevent occurrence of defective writing in the EPROM thus formed and also prevent the deterioration of an analog circuit that may be caused by the back bias.

REFERENCES:
patent: 4130826 (1978-12-01), Bachle
patent: 4476480 (1984-10-01), Fuse
patent: 4859619 (1989-08-01), Wu et al.
patent: 4887142 (1989-12-01), Bertotti

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