Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-02-08
2010-10-05
Malsawma, Lex (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S774000, C257SE21578, C257SE21579
Reexamination Certificate
active
07807567
ABSTRACT:
The semiconductor device of the present invention includes a first interconnection, a via-plug that is connected to the first interconnection, and a second interconnection that is formed as a single unit with the via-plug. The cross-sectional shape of the via-plug is such that the plug sidewall angle, which indicates the angle of the via-plug sidewall with respect to the surface of the first interconnection, is a positive angle; and moreover, at least two points exist between the base and the top of the via-plug on at least one sidewall of the two sidewalls of the cross-sectional shape of the via-plug at which the plug sidewall angle attains a maximum value. Since shapes that would give rise to the occurrence of concentrations of stress are not formed in the via-plug sidewalls, metal is more effectively embedded in the via-hole, and the incidence of voids is prevented.
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T. Oshima et al., “Suppression of Stress-Induced Voiding in Copper Interconnects” IEDM, 2002, pp. 1-4.
Ito Takamasa
Kawano Masaya
Yamamoto Yoshiaki
Kraig William F
Malsawma Lex
NEC Electronics Corporation
Sughrue & Mion, PLLC
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