Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-29
2008-04-29
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S338000, C257S342000, C257SE27064
Reexamination Certificate
active
11010508
ABSTRACT:
Gate electrodes of a TLPM and gate electrodes of planar devices are formed by patterning a same polysilicon layer. Drain electrode(s) and source electrode(s) of the TLPM and drain electrodes and source electrodes of the planar devices are formed by patterning a same metal layer. Therefore, the TLPM and the planar devices can be connected electrically to each other by resulting metal wiring layers and polysilicon layers without the need for performing wire bonding on a printed circuit board.
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Fujishima Naoto
Kitamura Mutsumi
Sugi Akio
Tabuchi Katsuya
Wakimoto Setsuko
Cao Phat X.
Fuji Electric & Co., Ltd.
Kalam Abul
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