Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-06
2007-02-06
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C977S943000, C977S773000, C977S831000
Reexamination Certificate
active
10549015
ABSTRACT:
A semiconductor device, which is arranged in a semiconductor body (1), and which comprises at least one source region (4) and at least one drain region (5), each being of the first conductivity type, and at least one body (8) of the second conductivity type, arranged between source region (4) and drain region (5), and at least one gate electrode (10) which is isolated with respect to the semiconductor body (1) via an isolation layer (9). Said isolation layer (9) comprises polarizable particles, which are composed of a nanoparticulate isolating core and a sheath of polarizable anions or polarizable cations. The isolation layer (9) exhibits a high dielectric constant ε.
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Grabowski Stefan Peter
Ronda Cornelis Reinder
Elms Richard T.
Lulis Michael
NXP B.V.
Zawilski Peter
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