Semiconductor device with insulating layer having ion-coated...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C977S943000, C977S773000, C977S831000

Reexamination Certificate

active

10549015

ABSTRACT:
A semiconductor device, which is arranged in a semiconductor body (1), and which comprises at least one source region (4) and at least one drain region (5), each being of the first conductivity type, and at least one body (8) of the second conductivity type, arranged between source region (4) and drain region (5), and at least one gate electrode (10) which is isolated with respect to the semiconductor body (1) via an isolation layer (9). Said isolation layer (9) comprises polarizable particles, which are composed of a nanoparticulate isolating core and a sheath of polarizable anions or polarizable cations. The isolation layer (9) exhibits a high dielectric constant ε.

REFERENCES:
patent: 4349664 (1982-09-01), Matsumura et al.
patent: 6294401 (2001-09-01), Jacobson et al.
patent: 7005674 (2006-02-01), Lee et al.
patent: 2001/0048969 (2001-12-01), Constantino et al.
patent: 2002/0000593 (2002-01-01), Koyama et al.
patent: 2002/0045045 (2002-04-01), Adams et al.
patent: 2003/0173586 (2003-09-01), Moriwaki et al.
patent: 2006/0030135 (2006-02-01), Hu
patent: 0 843 360 (1998-05-01), None
patent: 1 226 878 (2002-07-01), None

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