Semiconductor device with input protection circuit of high withs

Details Semiconductor device with input protection circuit of high withs Semiconductor device with input protection circuit of high withs

1991-07-05

1993-05-11

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, 257315, H01L 2978, H01L 2702

Patent

active

052104362

ABSTRACT:
A semiconductor device equipped with an input protection circuit having a high withstand voltage and an improved reliability. The input protection circuit of the semiconductor device includes a gate insulation film provided on the semiconductor substrate corresponding to a region between the source region and the drain region, having a thickness greater than that of a gate insulation film in the FET of the semiconductor device, where one of the source region and the drain region is connected with an external input terminal for the semiconductor device, while the gate electrode and the other one of the source region and the drain region are connected with a power source for the semiconductor device.

REFERENCES:
patent: 4602267 (1986-07-01), Shirato
patent: 4893157 (1990-01-01), Miyazawa et al.
patent: 5142345 (1992-08-01), Miyata

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