Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-02
1998-02-24
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257372, 257377, 257380, 257385, 257370, 257903, 257401, H01L 2978, H01L 2702, H01L 2972
Patent
active
057214450
ABSTRACT:
An apparatus and method for providing improved latch-up immunity in a semiconductor device such as a complementary metal-oxide-semiconductor (CMOS) integrated circuit. An exemplary apparatus includes a first region of semiconductor material of a first conductivity type, a well of semiconductor material formed in the first region and having a second conductivity type opposite to the first conductivity type, a first MOS transistor formed in the well and including a source region and a drain region formed of semiconductor material of the first conductivity type, and a second MOS transistor formed in the first region and having a source region and a drain region formed of semiconductor material of the second conductivity type. A conductive material or other suitable routing means is connected between the source region of one of the first or second MOS transistors and a corresponding voltage supply input of the device. In one embodiment, the routing means is formed of a semiconductor material having the same conductivity type as the source region, and may be a P.sup.+ or N.sup.+ active region. The source region of the first and/or second MOS transistor may be formed from a portion of the routing means.
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Singh Ranbir
Thoma Morgan Jones
Fahmy Wael
Lucent Technologies - Inc.
Rehberg John T.
Williams Alexander Oscar
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