Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-03-11
2008-09-23
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S692000, C257S738000
Reexamination Certificate
active
07427812
ABSTRACT:
The semiconductor device of the present invention has a semiconductor substrate having a top surface of a quadrangular shape on which a plurality of connection pads are formed, an insulation film formed on the semiconductor substrate except the connection pads, and a plurality of external connection electrodes formed on the insulation film so as to be connected to the connection pads. The plurality of external connection electrodes constitute at least a first group of external connection electrodes which are arranged on first lines running along each of the two diagonal lines of the semiconductor substrate and second group of external connection electrodes which are arranged on second lines running along the first lines outside the first lines as seen from the diagonal lines.
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Jobetto Hiroyasu
Wakisaka Shinji
Casio Computer Co. Ltd.
Frishauf Holtz Goodman & Chick P.C.
Vu Hung
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