Semiconductor device with increased drain breakdown voltage

Details Semiconductor device with increased drain breakdown voltage Semiconductor device with increased drain breakdown voltage

2011-01-11

2011-01-11

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S378000, C257S408000

Reexamination Certificate

active

07868385

ABSTRACT:
A semiconductor device is disclosed that is capable of improving the drain breakdown voltage during operation. The semiconductor device includes a first drain region that is arranged to extend from the vicinity of an end portion of the gate electrode at the drain electrode side in a direction toward the drain electrode, a drain contact region that is formed within the first drain region and comes into contact with the drain electrode, and a second drain region that is formed around and underneath the drain contact region. The second drain contact region has an impurity concentration that is higher than the impurity concentration of the first drain contact region and lower than the impurity concentration of the drain contact region. An end portion of the second drain region at the gate electrode side is positioned away from the end portion of the gate electrode by a predetermined distance.

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Chinese Office Action dated Oct. 26, 2007 issued in corresponding Chinese Application No. 2005-10058902.1.

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