Semiconductor device with increased distance between channel edg

Details Semiconductor device with increased distance between channel edg Semiconductor device with increased distance between channel edg

1997-12-22

2000-01-04

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438159, 438163, H01L 2100, H01L 2184

Patent

active

06010922&

ABSTRACT:
The semiconductor device of this invention includes a substrate having an insulating surface and a thin film transistor formed on the substrate, wherein the thin film transistor has a semiconductor island including a channel region and source/drain regions, a gate insulating film formed on the semiconductor island and a gate electrode covering the channel region of the semiconductor island interposing the gate insulating film therebetween, and wherein a distance between an edge of the channel region of the semiconductor island and the gate electrode is larger than a distance between a central portion of the channel region of the semiconductor island and the gate electrode.

REFERENCES:
patent: 4242156 (1980-12-01), Peel
patent: 4822751 (1989-04-01), Ishizu et al.
patent: 5128733 (1992-07-01), Tyson
patent: 5130263 (1992-07-01), Possin et al.
patent: 5130264 (1992-07-01), Troxell et al.
patent: 5397718 (1995-03-01), Furuta et al.
patent: 5419876 (1995-05-01), Usui et al.
patent: 5474941 (1995-12-01), Mitani et al.
patent: 5527726 (1996-06-01), Possin et al.
patent: 5561075 (1996-10-01), Nakazawa
patent: 5567967 (1996-10-01), Kusumoto
patent: 5569935 (1996-10-01), Takemura et al.
patent: 5612235 (1997-03-01), Wu et al.
patent: 5702960 (1997-12-01), Moon
patent: 5780903 (1998-07-01), Tsai et al.
patent: 5811325 (1998-09-01), Lin et al.
patent: 5834343 (1998-11-01), Ogasawara et al.
patent: 5846855 (1998-12-01), Igarashi et al.
patent: 5885859 (1999-03-01), Han et al.
patent: 5888855 (1999-03-01), Nagahisa et al.

Affiliated with

Also associated with

Rating

Semiconductor device with increased distance between channel edg does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with increased distance between channel edg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with increased distance between channel edg will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1072132