Semiconductor device with increased channel area and...

Details Semiconductor device with increased channel area and... Semiconductor device with increased channel area and...

2011-03-22

2011-03-22

Bryant, Kiesha R (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21410, C257SE29274

Reexamination Certificate

active

07910989

ABSTRACT:
The semiconductor device includes an active region, a recess channel region including vertical channel structures, a gate insulating film, and a gate structure. The active region is defined by a device isolation structure formed in a semiconductor substrate. The recess channel region is formed in the active region. The vertical silicon-on-insulator (SOI) channel structures are disposed at sidewalls of both device isolation structures in a longitudinal direction of a gate region. The gate insulating film is disposed over the active region including the recess channel region. The gate structure is disposed over the recess channel region of the gate region.

REFERENCES:
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patent: 6285057 (2001-09-01), Hopper et al.
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patent: 7247540 (2007-07-01), Chung et al.
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patent: 2005/0032322 (2005-02-01), Kim et al.
patent: 2005/0233513 (2005-10-01), Kim et al.
patent: 1020050034879 (2005-04-01), None

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