Semiconductor device with improved salicide structure and a meth

Details Semiconductor device with improved salicide structure and a meth Semiconductor device with improved salicide structure and a meth

1997-09-23

1998-04-14

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257382, 257383, 257388, 257900, 438302, 438305, H01L 2976, H01L 2994, H01L 27088

Patent

active

057395730

ABSTRACT:
A semiconductor device includes a gate insulating film on a semiconductor region of a first conductive type. There is provided on the gate insulating film a gate electrode having a channel length under a design rule of 350 nm or below. The gate electrode includes a first conductive film and a first silicide film formed on the first conductive film and a contact length between the first conductive film and the first silicide film in a channel length direction is longer than the channel length. Source and drain regions each including an impurity layer of a second conductive type formed on the surface of the semiconductor region and a second silicide film formed on the impurity layer. An insulating film spacer structure is provided to contact with side surfaces of the first conductive film of the gate electrode and to have a top surface thereof higher than a top surface of the gate electrode.

REFERENCES:
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patent: 4908326 (1990-03-01), Ma et al.
patent: 5053848 (1991-10-01), Houston et al.
patent: 5068696 (1991-11-01), Yang et al.
patent: 5162882 (1992-11-01), Pollack
patent: 5183771 (1993-02-01), Mitsui et al.
Thin Solid Films, vol. 198, pp. 53-66, 1991.
IEEE Transactions on Electron Devices, vol. 38-2, pp. 262-269, 1991.
"Titanium Disilicide Self-Aligned Source/Drain + Gate Technology" IEEE, IEDM 82, pp. 714-717, 1982.
"High Conductivity Diffusions and Gate Regions Using Self-Aligned Silicide Technology", by C.M. Osburn, et al., pp. 213-223.

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