Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-01-10
2006-01-10
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S635000, C257S741000, C257S750000, C438S597000, C438S689000, C438S710000
Reexamination Certificate
active
06984875
ABSTRACT:
A semiconductor device includes an insulating layer, a conducting portion, and a modified layer. The insulating layer is formed on a semiconductor substrate. The conducting portion is formed in the insulating layer. The modified layer is formed between the insulating layer and the conducting portion. The insulating layer includes hydrogenated polysiloxane. The modified layer is a layer to which the hydrogenated polysiloxane is modified. A portion of the modified layer far from the semiconductor substrate may be thicker than a portion of the modified layer near the semiconductor substrate.
REFERENCES:
patent: 6051508 (2000-04-01), Takase et al.
patent: 2001/0017422 (2001-08-01), Oda
patent: 11-87502 (1999-03-01), None
patent: 2000-294634 (2000-10-01), None
patent: 2001-326222 (2001-11-01), None
patent: 2002-110644 (2002-04-01), None
patent: 2002-246383 (2002-08-01), None
patent: 2003-17561 (2003-01-01), None
patent: 2003-533025 (2003-11-01), None
Andrews, “Polysiloxane Modifications”, Protective Coatings Worldwide, http://www.international-pc.com/pc/Focus—markets/tech—papers/polysiloxane—modifications—AFW—nov03.pdf , Nov. 2003.
NEC Electronics Corporation
Pert Evan
Wilson Scott R.
Young & Thompson
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