Semiconductor device with improved protection from...

Details Semiconductor device with improved protection from... Semiconductor device with improved protection from...

2007-07-03

2007-07-03

Chambliss, Alonzo (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S382000, C257S401000, C257S409000

Reexamination Certificate

active

10947329

ABSTRACT:
A concentric polygonal metal-oxide-semiconductor field-effect transistor is designed to avoid overlap between corners of the central drain diffusion and inner corners of the surrounding annular gate electrode. For example, the gate electrode may be reduced to separate straight segments by eliminating the corner portions. Alternatively, the drain diffusion may have a cross shape, and the outer annular source diffusion may be reduced to straight segments facing the ends of the cross, or the source and drain diffusions and gate electrodes may all be reduced to separate straight segments. By avoiding electric field concentration in the corner regions, these designs provide enhanced protection from electrostatic discharge.

REFERENCES:
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patent: 5838050 (1998-11-01), Ker et al.
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patent: 6621133 (2003-09-01), Chen et al.
patent: 6680512 (2004-01-01), Nishikawa et al.
patent: 6750517 (2004-06-01), Ker et al.
patent: 6798022 (2004-09-01), Kuroda et al.

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