Semiconductor device with improved pn junction breakdown voltage

Details Semiconductor device with improved pn junction breakdown voltage Semiconductor device with improved pn junction breakdown voltage

1997-08-28

1999-03-09

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 257341, 257345, H01L 2976, H01L 2994

Patent

active

058805079

ABSTRACT:
An impurity concentration profile that improves pn junction breakdown voltage and mitigates the electric field, and that does not adversely affect the characteristics of a field effect transistor is realized. An n type source/drain region is formed at a silicon substrate. A p type impurity concentration profile includes respective peak concentrations at a dope region for forming a p type well, a p type channel cut region, and a p type channel dope region. An impurity concentration profile of the n type source/drain region crosses the p type impurity concentration profile at a low concentration, and includes phosphorus implantation regions indicating impurity concentrations respectively higher than those of the p type channel cut region and the p type channel dope region and respective peaks in impurity concentration at the neighborhood of respective depth thereof. The impurity concentration profile of the n type source/drain region has a minimum point or inflection point at the region between the impurity concentration peaks of the phosphorus implantation regions.

REFERENCES:
patent: 4109371 (1978-08-01), Shibata et al.
patent: 5349225 (1994-09-01), Redwine et al.
patent: 5355011 (1994-10-01), Takata
patent: 5440165 (1995-08-01), Mitsunaga et al.
patent: 5536959 (1996-07-01), Kellam
patent: 5691560 (1997-11-01), Sakakibara

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